globalchange  > 气候变化与战略
DOI: 10.1073/pnas.1802427116
论文题名:
Spectral dynamics of shift current in ferroelectric semiconductor SbSI
作者: Sotome M.; Nakamura M.; Fujioka J.; Ogino M.; Kaneko Y.; Morimoto T.; Zhang Y.; Kawasaki M.; Nagaosa N.; Tokura Y.; Ogawa N.
刊名: Proceedings of the National Academy of Sciences of the United States of America
ISSN: 0027-8424
出版年: 2019
卷: 116, 期:6
起始页码: 1929
结束页码: 1933
语种: 英语
英文关键词: Bulk matter ; Ferroelectricity ; Photovoltaic effect ; Picosecond techniques ; Solar cells
Scopus关键词: antimony derivative ; antimony sulfur iodide ; iodine derivative ; sulfur derivative ; unclassified drug ; Article ; dynamics ; electric current ; electromagnetic radiation ; electron transport ; factor analysis ; ferroelectric semiconductor ; mathematical computing ; photon ; priority journal ; terahertz radiation
英文摘要: Photoexcitation in solids brings about transitions of electrons/ holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the geometric phase of the constituting electronic bands: the Berry connection. This photocurrent, termed shift current, is expected to emerge on the timescale of primary photoexcitation process. We observe ultrafast evolution of the shift current in a prototypical ferroelectric semiconductor antimony sulfur iodide (SbSI) by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the bandgap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection on interband optical transition. The shift excitation carries a net charge flow and is followed by a swing over of the electron cloud on a subpicosecond timescale. Understanding these substantive characters of the shift current with the help of first-principles calculation will pave the way for its application to ultrafast sensors and solar cells. © 2019 National Academy of Sciences. All Rights Reserved.
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/163570
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作者单位: Sotome, M., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan; Nakamura, M., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, 332-0012, Japan; Fujioka, J., PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, 332-0012, Japan, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Ogino, M., Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Kaneko, Y., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan; Morimoto, T., Department of Physics, University of California, Berkeley, CA 94720, United States; Zhang, Y., Solid State Chemistry, Max Planck Institute for Chemical Physics of Solids, Dresden, 01187, Germany, Institute for Theoretical Solid State Physics, Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany; Kawasaki, M., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Nagaosa, N., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Tokura, Y., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Ogawa, N., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, 332-0012, Japan

Recommended Citation:
Sotome M.,Nakamura M.,Fujioka J.,et al. Spectral dynamics of shift current in ferroelectric semiconductor SbSI[J]. Proceedings of the National Academy of Sciences of the United States of America,2019-01-01,116(6)
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