globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2020.03.035
论文题名:
From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions
作者: Hu C.; Zhang D.; Yan F.; Li Y.; Lv Q.; Zhu W.; Wei Z.; Chang K.; Wang K.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期:13
起始页码: 1072
结束页码: 1077
语种: 英语
中文关键词: Fe3GeTe2 ; Multi-state ; Van der Waals homo-junction ; Vertical spin valve ; Without spacer layer
英文关键词: Dangling bonds ; Germanium compounds ; Iron compounds ; Magnetic devices ; Magnetic materials ; Magnetic multilayers ; Magnetoresistance ; Tellurium compounds ; Van der Waals forces ; Fe3GeTe2 ; Homo-junctions ; Multi-state ; Spacer layer ; Spin valve ; Interface states
英文摘要: Different than covalently bonded magnetic multilayer systems, high-quality interfaces without dangling bonds in van der Waals (vdW) junctions of two-dimensional (2D) layered magnetic materials offer opportunities to realize novel functionalities. Here, we report the fabrication of multi-state vertical spin valves without spacer layers by using vdW homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers. We demonstrate the typical behavior of two-state and three-state magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes, respectively. Distinct from traditional spin valves with sandwich structures, our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices. Our work demonstrates the possibility of extend multi-state, non-volatile spin information to 2D magnetic homo-junctions, and it emphasizes the utility of vdW interface as a fundamental building block for spintronic devices. © 2020 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/169914
Appears in Collections:气候变化与战略

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作者单位: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China

Recommended Citation:
Hu C.,Zhang D.,Yan F.,et al. From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions[J]. Science Bulletin,2020-01-01,65(13)
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