globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2020.05.027
论文题名:
Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor
作者: Li G.; Zhang H.; Meng L.; Sun Z.; Chen Z.; Huang X.; Qin Y.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期:19
起始页码: 1650
结束页码: 1658
语种: 英语
中文关键词: Adsorption ; Gas sensor ; Oxygen vacancy states ; Sensing mechanism
英文关键词: Annealing ; Chemical detection ; Gas detectors ; Gases ; II-VI semiconductors ; Nitrogen oxides ; Oxide minerals ; Oxygen ; Oxygen vacancies ; Zinc oxide ; Competitive adsorption ; Gas sensing properties ; Ionized state ; ITS applications ; NO2 gas sensor ; Post annealing ; Post annealing treatment ; Systematical analysis ; Ionization of gases
英文摘要: Oxygen vacancy (VO) is long believed as a key factor influencing the gas sensing properties. However, the concentration of VO is generally focused while the VO state is neglected, which masks the inherent mechanism of gas sensor. Using a post annealing process, the influence of VO states on the response of ZnO nanofilm to NO2 gas is investigated in this study. The systematical analysis of the results obtained by different methods indicates a transformation of VO from the neutral to the doubly ionized state during post annealing treatment. The results also imply that the gas sensing properties is not directly correlated with the VO concentration. And due to the competitive adsorption of ambient O2, the neutral VO is majorly occupied by the adsorbed O2 while the VO in doubly ionized state can promote the adsorption of NO2. Consequently, the transition of VO from the neutral to the doubly ionized state can lead to a dramatic increase of the response to NO2, from 733 to 3.34 × 104 for 100 ppm NO2. Guided by this mechanism, NO2 gas sensing in ppb-level is also achieved: the response reaches 165% to 25 ppb (0.025 ppm) NO2 with a good repeatability. © 2020 Science China Press
Citation statistics:
资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/169950
Appears in Collections:气候变化与战略

Files in This Item:

There are no files associated with this item.


作者单位: Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China

Recommended Citation:
Li G.,Zhang H.,Meng L.,et al. Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor[J]. Science Bulletin,2020-01-01,65(19)
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Li G.]'s Articles
[Zhang H.]'s Articles
[Meng L.]'s Articles
百度学术
Similar articles in Baidu Scholar
[Li G.]'s Articles
[Zhang H.]'s Articles
[Meng L.]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Li G.]‘s Articles
[Zhang H.]‘s Articles
[Meng L.]‘s Articles
Related Copyright Policies
Null
收藏/分享
所有评论 (0)
暂无评论
 

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.