globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2021.07.018
论文题名:
Multi-level phase-change memory with ultralow power consumption and resistance drift
作者: Liu B.; Li K.; Liu W.; Zhou J.; Wu L.; Song Z.; Elliott S.R.; Sun Z.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
语种: 英语
中文关键词: Antimony telluride ; Multi-level storage ; Phase-change memory ; Power consumption ; Resistance drift ; Yttrium doping
英文关键词: Antimony compounds ; Crystalline materials ; Crystallinity ; Electric power utilization ; Metastable phases ; Phase change materials ; Storage (materials) ; Yttrium ; Antimony telluride ; Data storage systems ; Multi-level storage ; Multilevels ; Phase-change memory ; Power ; Resistance drifts ; Ultra-low power consumption ; Ultralow-power consumption ; Yttrium doping ; Phase change memory
英文摘要: By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change memory materials can provide multi-level data storage (MLS), which offers great potential for high-density storage-class memory and neuro-inspired computing. However, this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase (“drift”) in the amorphous phase, which limits the number of attainable storage levels. Here, we report a new type of MLS system in yttrium-doped antimony telluride, utilizing reversible multi-level phase transitions between three states, i.e., amorphous, metastable cubic and stable hexagonal crystalline phases, with ultralow power consumption (0.6–4.3 pJ) and ultralow resistance drift for the lower two states (power-law exponent < 0.007). The metastable cubic phase is stabilized by yttrium, while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb atoms. Finally, the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high performance. This study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations. © 2021 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170328
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作者单位: School of Materials Science and Engineering, Beihang University, Beijing, 100191, China; Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China; College of Science, Donghua University, Shanghai, 201620, China; Department of Chemistry, University of Cambridge, Cambridge, CB2 1EW, United Kingdom; Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford, OX1 3QZ, United Kingdom

Recommended Citation:
Liu B.,Li K.,Liu W.,et al. Multi-level phase-change memory with ultralow power consumption and resistance drift[J]. Science Bulletin,2021-01-01
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