School of Materials Science and Engineering, Beihang University, Beijing, 100191, China; Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China; College of Science, Donghua University, Shanghai, 201620, China; Department of Chemistry, University of Cambridge, Cambridge, CB2 1EW, United Kingdom; Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford, OX1 3QZ, United Kingdom
Recommended Citation:
Liu B.,Li K.,Liu W.,et al. Multi-level phase-change memory with ultralow power consumption and resistance drift[J]. Science Bulletin,2021-01-01