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作者单位: | State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China; Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China; Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, China; Institutes of Physical Science and Information Technology, Anhui University, Hefei, 231699, China; School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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Recommended Citation: |
Liu K.,Chen X.,Gong P.,et al. Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution[J]. Science Bulletin,2021-01-01
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