globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2021.07.010
论文题名:
Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution
作者: Liu K.; Chen X.; Gong P.; Yu R.; Wu J.; Li L.; Han W.; Yang S.; Zhang C.; Deng J.; Li A.; Zhang Q.; Zhuge F.; Zhai T.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
语种: 英语
中文关键词: 2D materials ; Chalcogenide substitution ; Controllable strain ; Lattice inheritance ; Strain engineering
英文关键词: Chalcogenides ; Electronic properties ; Layered semiconductors ; Molybdenum compounds ; Processing ; Substitution reactions ; Tellurium compounds ; 2d material ; Chalcogenide substitution ; Controllable strain ; Highly strained ; Lattice inheritance ; MoS$-2$ ; Property ; Strain engineering ; Strain limit ; Two-dimensional ; Strain
英文摘要: Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS2, remains cumbersome. Here we report on a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance. The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS2/MoTe2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices. © 2021 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170334
Appears in Collections:气候变化与战略

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作者单位: State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China; Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China; Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, China; Institutes of Physical Science and Information Technology, Anhui University, Hefei, 231699, China; School of Physics and Technology, Wuhan University, Wuhan, 430072, China

Recommended Citation:
Liu K.,Chen X.,Gong P.,et al. Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution[J]. Science Bulletin,2021-01-01
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