globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2021.07.021
论文题名:
Alkalis-doping of mixed tin-lead perovskites for efficient near-infrared light-emitting diodes
作者: Yu H.; Chen W.; Fang Z.; Ding L.; Cao B.; Xiao Z.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
语种: 英语
中文关键词: Alkali cations doping ; Microstrain relaxation ; Mixed Pb/Sn perovskite ; NIR PeLEDs
英文关键词: Carrier lifetime ; Infrared devices ; Light emitting diodes ; Metal halides ; Molar ratio ; Positive ions ; Quantum efficiency ; Tin ; Alkali cation doping ; Infrared light emitting diodes ; Infrared light-emitting diodes ; Microstrain relaxation ; Mixed pb/sn perovskite ; Molar ratio ; Near Infrared ; Near infrared light ; Near infrared perovskite LED ; Optoelectronics devices ; Perovskite
英文摘要: Substitution of lead (Pb) with tin (Sn) is a very important way to reduce the bandgap of metal halide perovskite for applications in solar cells, and near infrared (NIR) light-emitting diodes (LEDs), etc. However, mixed Pb/Sn perovskite becomes very disordered with high trap density when the Sn molar ratio is less than 20%. This limits the applications of mixed Pb/Sn perovskites in optoelectronic devices such as wavelength tunable NIR perovskite LEDs (PeLEDs). In this work, we demonstrate that alkali cations doping can release the microstrain and passivate the traps in mixed Pb/Sn perovskites with Sn molar ratios of less than 20%, leading to higher carrier lifetime and photoluminescence quantum yield (PLQY). The external quantum efficiency (EQE) of Sn0.2Pb0.8-based NIR PeLEDs is dramatically enhanced from 0.1% to a record value of 9.6% (emission wavelength: 868 nm). This work provides a way of making high quality mixed Pb/Sn optoelectronic devices with small Sn molar ratios. © 2021 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170483
Appears in Collections:气候变化与战略

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作者单位: Hefei National Laboratory for Physical Science at the Microscale, Department of Physics, Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China, Hefei, 230026, China; School of Material Science and Engineering, Materials Research Center for Energy and Photoelectrochemical Conversion, University of Jinan, Jinan, 250022, China; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China

Recommended Citation:
Yu H.,Chen W.,Fang Z.,et al. Alkalis-doping of mixed tin-lead perovskites for efficient near-infrared light-emitting diodes[J]. Science Bulletin,2021-01-01
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