DOI: 10.1016/j.scib.2021.04.025
论文题名: Realization of a non-markov chain in a single 2D mineral RRAM
作者: Zhang R. ; Chen W. ; Teng C. ; Liao W. ; Liu B. ; Cheng H.-M.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
卷: 66, 期: 16 起始页码: 1634
结束页码: 1640
语种: 英语
中文关键词: 2D materials
; Ion transport
; Mica
; Non-Markov chain
; RRAM
英文关键词: Electric fields
; Markov processes
; RRAM
; 2d material
; Ion-transport
; Material-based
; Non-markov chain
; Non-markov process
; Random access memory
; Resistive random access memory
; Systems complexity
; Traditional devices
; Two-dimensional
; Mica
英文摘要: The non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure. We find that the potassium ions (K+) in 2D mica gradually move in the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is changed by an electric field, and the 2D-mica RRAM has both single and double memory windows, a high on/off ratio, decent stability, and repeatability. This is the first time a non-Markov chain process has been established in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers an intrinsic inner ionic conductivity of 2D mica, but also opens the door for the production of such RRAM devices with numerous functions and applications. © 2021 Science China Press Citation statistics:
资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170504
Appears in Collections: 气候变化与战略
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作者单位: Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
Recommended Citation:
Zhang R.,Chen W.,Teng C.,et al. Realization of a non-markov chain in a single 2D mineral RRAM[J]. Science Bulletin,2021-01-01,66(16)