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DOI:	10.1371/journal.pone.0089348
论文题名:	Determination of Acceptor Concentration, Depletion Width, Donor Level Movement and Sensitivity Factor of ZnO on Diamond Heterojunction under UV Illumination
作者:	Kim Guan Saw; Sau Siong Tneh; Fong Kwong Yam; Sha Shiong Ng; Zainuriah Hassan
刊名:	PLOS ONE
ISSN:	1932-6203
出版年:	2014
发表日期:	2014-2-26
卷:	9, 期:2
语种:	英语
英文关键词:	Diamonds ; Boron ; Oxygen ; Thin films ; Ultraviolet radiation ; Chemical vapor deposition ; Electric conductivity ; X-ray diffraction
英文摘要:	The concentration of acceptor carriers, depletion width, magnitude of donor level movement as well as the sensitivity factor are determined from the UV response of a heterojunction consisting of ZnO on type IIb diamond. From the comparison of the I-V measurements in dark condition and under UV illumination we show that the acceptor concentration (∼1017 cm−3) can be estimated from p-n junction properties. The depletion width of the heterojunction is calculated and is shown to extend farther into the ZnO region in dark condition. Under UV illumination, the depletion width shrinks but penetrates both materials equally. The ultraviolet illumination causes the donor level to move closer to the conduction band by about 50 meV suggesting that band bending is reduced to allow more electrons to flow from the intrinsically n-type ZnO. The sensitivity factor of the device calculated from the change of threshold voltages, the ratio of dark and photocurrents and identity factor is consistent with experimental data.
URL:	http://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0089348&type=printable
Citation statistics:
资源类型:	期刊论文
标识符:	http://119.78.100.158/handle/2HF3EXSE/19920
Appears in Collections:	过去全球变化的重建影响、适应和脆弱性科学计划与规划气候变化与战略全球变化的国际研究计划气候减缓与适应气候变化事实与影响

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File Name/ File Size	Content Type	Version	Access	License
journal.pone.0089348.PDF（425KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	View Download

作者单位:

Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, Minden, Penang, Malaysia;Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, Minden, Penang, Malaysia;Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, Minden, Penang, Malaysia;Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, Minden, Penang, Malaysia;Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, Minden, Penang, Malaysia

Recommended Citation:

Kim Guan Saw,Sau Siong Tneh,Fong Kwong Yam,et al. Determination of Acceptor Concentration, Depletion Width, Donor Level Movement and Sensitivity Factor of ZnO on Diamond Heterojunction under UV Illumination[J]. PLOS ONE,2014-01-01,9(2)

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