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期刊论文 [3]
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2021 [3]
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layered se... [3]
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High-current MoS2 transistors with non-planar gate configuration [期刊论文]
Science Bulletin, 2021-01-01, 66 (8
Lin J.;  Wang B.;  Yang Z.;  Li G.;  Zou X.;  Chai Y.;  Liu X.;  Liao L.
View/Download：13/0
 
Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution [期刊论文]
Science Bulletin, 2021-01-01,
Liu K.;  Chen X.;  Gong P.;  Yu R.;  Wu J.;  Li L.;  Han W.;  Yang S.;  Zhang C.;  Deng J.;  Li A.;  Zhang Q.;  Zhuge F.;  Zhai T.
View/Download：18/0
 
Interlayer engineering of molybdenum disulfide toward efficient electrocatalytic hydrogenation [期刊论文]
Science Bulletin, 2021-01-01, 66 (10
Tan J.;  Zhang W.;  Shu Y.;  Lu H.;  Tang Y.;  Gao Q.
View/Download：11/0
 

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