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期刊论文 [1]
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2020 [1]
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globalchange

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Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures [期刊论文]
Science Bulletin, 2020-01-01, 65 (17
Wang F.;  Liu J.;  Huang W.;  Cheng R.;  Yin L.;  Wang J.;  Sendeku M.G.;  Zhang Y.;  Zhan X.;  Shan C.;  Wang Z.;  He J.
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